document number: 94522 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 21-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 insulated ultrafast rectifier module, 120 a ufb120fa20p vishay semiconductors features ? two fully independent diodes ? ceramic fully insulated package (v isol = 2500 v ac ) ? ultrafast reverse recovery ? ultrasoft reverse recovery current shape ? low forward voltage ? optimized for power conver sion: welding and industrial smps applications ? industry standard outline ? plug-in compatible with other sot-227 packages ? easy to assemble ? direct mounting to heatsink ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description the ufb120fa20p insulated modules integrate two state of the art vishay semiconductors ultrafast recovery rectifiers in the compact, industry standard sot-227 package. the planar structure of the diodes , and the platinum doping life time control, provide a ultr asoft recovery current shape, together with the best overal l performance, ruggedness and reliability characteristics. these devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of th e total energy, such as in the output rectification stage of welding machines, smps, dc-to-dc converters. their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and emi/rfi. product summary v r 200 v i f(av) at t c = 90 c 120 a t rr 28 ns sot-227 absolute maximum ratings parameter s ymbol te s t condition s max. unit s cathode to anode voltage v r 200 v continuous forward current per diode i f t c = 90 c 60 a single pulse forwar d current per diode i fsm t c = 25 c 850 maximum power dissip ation per module p d t c = 90 c 110 w rms isolation voltage v isol any terminal to case, t = 1 min 2500 v operating junction and storage temperatures t j , t stg - 55 to 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94522 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 21-jul-10 ufb120fa20p vishay semiconductors insulated ultrafast rectifier module, 120 a electrical specifications per diode (t j = 25 c unless otherwise specified) parameter s ymbol te s t condition s min. typ. max. unit s cathode to anode breakdown voltage v br i r = 100 a 200 - - v forward voltage v fm i f = 60 a - 0.96 1.13 i f = 60 a, t j = 150 c - 0.79 0.90 reverse leakage current i rm v r = v r rated - - 100 a t j = 150 c, v r = v r rated - - 1.0 ma junction capacitance c t v r = 200 v - 105 - pf dynamic recovery characteristics per diode (t j = 25 c unless otherwise specified) parameter s ymbol te s t condition s min. typ. max. unit s reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - - 28 ns t j = 25 c i f = 50 a di f /dt = 200 a/s v r = 100 v -32- t j = 125 c - 64 - peak recovery current i rrm t j = 25 c - 4.0 - a t j = 125 c - 8.2 - reverse recovery charge q rr t j = 25 c - 64 - nc t j = 125 c - 263 - thermal - mechanical specifications parameter s ymbol te s t condition s min. typ. max. unit s junction to case, single diode conducting r thjc -0.81.1 k/w junction to case, both diodes conducting - 0.4 0.55 case to heatsink r thcs flat, greased surface - 0.05 - weight -30- g mounting torque -1.3-nm
document number: 94522 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 21-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 ufb120fa20p insulated ultrafast rectifier module, 120 a vishay semiconductors fig. 1 - maximum forward voltage drop characteristics (per diode) fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc (per diode) forward voltage drop - v fm (v) instantaneous forward current - i f (a) 1 10 100 1000 0.2 0.6 1 1.4 1.8 tj = 150?c tj = 125?c tj = 25?c reverse voltage - v r (v) reverse current - i r (?) 0.001 0.01 0.1 1 10 100 050100150200 125?c 25?c tj = 150?c reverse voltage - v r (v) junction capacitance - c t ( p f ) 100 1000 1 10 100 1000 tj = 25?c t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (?/w) 0.01 0.1 1 10 0.001 0.01 0.1 1 10 single pulse (thermal impedance) 2 t 1 t p dm notes: 1. duty factor d = t1/ t2 2. peak tj = pdm x zthjc + tc
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94522 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 21-jul-10 ufb120fa20p vishay semiconductors insulated ultrafast rectifier module, 120 a fig. 5 - maximum allowable case temperature vs. average forward current (per diode) fig. 6 - forward power loss (per diode) fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r average forward current - i f(av) (a) allowable case temperature (?) 80 90 100 110 120 130 140 150 0 10203040506070 dc square wave (d = 0.50) 80% rated vr applied see note (1) average power loss ( watts ) average forward current - i f(av) (a) 0 10 20 30 40 50 60 0 10203040506070 dc rms limit d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 trr ( ns ) di f /dt (a/? ) 0 10 20 30 40 50 60 70 80 0 0 0 1 0 0 1 tj = 125?c tj = 25?c if = 50a vrr = 200v qrr ( nc ) di f /dt (a/? ) 0 100 200 300 400 500 600 700 800 0 0 0 1 0 0 1 tj = 125?c tj = 25?c if = 50a vrr = 200v
document number: 94522 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 21-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 ufb120fa20p insulated ultrafast rectifier module, 120 a vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94522 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 21-jul-10 ufb120fa20p vishay semiconductors insulated ultrafast rectifier module, 120 a ordering information table circuit configuration link s to related document s dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 1 - ultrafast rectifier 2 - ultrafast pt diffused 3 - current rating (120 = 120 a) 4 - circuit configuration (2 separate diodes, parallel pin-out) 5 - package indicator (sot-227 standard isolated base) 6 - voltage rating (20 = 200 v) 7 - p = lead (pb)-free device code 5 13 24 67 uf b 120 f a 20 p 1 4 2 3
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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